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NV Centers in Silicon Carbide: from theoretical predictions to experimental observation

NV Centers in Silicon Carbide: from theoretical predictions to experimental observation

Datum: 21. Februar 2017 13:00

Ort: NWZII, 6.331

he NV center in diamond has become the object of intense studies in the last decade due to its exceptional magneto-optical properties which have given rise to multiple applications as qubits for quantum computing or nanoscale magnetometry. Following this, different authors have predicted [1-4] that NV centers should exist also in silicon carbide with properties which should allow also their application as qubits for quantum computing and nanometric sensors.

We have recently reported [5,6] the experimental observation of NV centers in 4H-SiC and very recently assessed their basic properties in all three polytypes 3C, 4H, 6H [7]. The results obtained by electron paramagnetic resonance spectroscopy, photoluminescence, optically detected magnetic resonance and calculations of their electronic structure by ab initio calculations confirm the initial predictions and show the rich potential of these defects which similar but modified properties as compared to the NV center in diamond.

I will present an overview of the principal properties of NV centers in the three polytypes 3C, 4H and 6H of SiC.

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